During their keynote at FMS, Toshiba also announced that they’ll be producing the world’s first 8-stack and 16-stack TSV (Through-Silicon-Via) NAND packages. Thanks to TSV NAND stacking, Toshiba is ...

A new research paper titled “Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages” was published by researchers at Sungkyunkwan University and Korea University.

前面介绍的都是CELL的原理,这一篇继续往上走,介绍NAND的组织结构。 面对应BLOCK， 即STRING(列) X PAGE(行)组成的面。 体对应DIE等更高层的组织。 NAND的基本操作单元不是CELL，而是一串CELL。 STRING将多个CELL单元按照如下形式串起来，即点到线。 这里和NOR是本质的区别。

TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO:6502) today announced the development of the world’s first *1 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going ...

Samsung is reportedly on the verge of announcing its next-generation V-NAND technology for SSDs, which will feature 290 layers for the first time. The company currently offers 236-layer V-NAND, so ...

For several decades, NAND flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...

According to a recent press release, Samsung has announced that they’ve begun mass production of the industry’s first 64GB DDR4 RDIMMs using their latest 3D TSV (Through Silicon Via) packaging ...