The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...

A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.

NAND 的最小存储结构，通过存储电荷表示不同电压窗，从而存储 1bit 或多 bit 信息。 传统工艺，将存储单元做在同一平面上，已基本被 3D 取代。 层数越高 → 密度更大、成本更低，但工艺复杂度增加。 主流 3D NAND 采用的结构，用氮化硅储存电荷。对比浮栅 ...